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Rof Intensity Modulator thin film lithium niobate modulator 20G TFLN modulator
1999 USD ($)/Quintal
Product Details:
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Rof Intensity Modulator thin film lithium niobate modulator 20G TFLN modulator Price And Quantity
- 1999 USD ($)/Quintal
- 1999.00 - 2999.00 USD ($)/Quintal
- 1 Quintal
Product Description
Rof 20G TFLN modulator. Thin film lithium niobate intensity modulator is a high-performance electro-optical conversion device, which is independently developed by our company and has complete independent intellectual property rights. The product is packaged by high-precision coupling technology to achieve ultra-high electro-optical conversion efficiency. Compared with the traditional lithium niobate crystal modulator, this product has the characteristics of low half-wave voltage, high stability, small device size and thermo-optical bias control, and can be widely used in digital optical communication, microwave photonics, backbone communication networks and communication research projects.
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Category |
Argument |
Sym | Uni | Aointer | |
|
Optical performance (@25C) |
Operating wavelength (*) | λ | nm | X2：C | |
| 1550 | |||||
| Optical extinction ratio (@DC) () | ER | dB | ‰ 20 | ||
|
Optical return loss
|
ORL | dB | ‰ -27 | ||
|
Optical insertion loss (*) |
IL | dB | MAX: 5.5Typ: 4.5 | ||
|
Electrical properties (@25C)
|
3 dB electro-optical bandwidth (from 2 GHz |
S21 | GHz | X1: 2 | X1: 4 |
| MIN: 18Typ: 20 | MIN: 36Typ: 40 | ||||
|
Rf half wave voltage (@50 kHz)
|
VÏ | V | X3：5 | X3：6 | |
| MAX: 3.0Typ: 2.5 | MAX: 3.5Typ: 3.0 | ||||
| Heat modulated bias half wave power | PÏ | mW | ‰ 50 | ||
|
Rf return loss (2 GHz to 40 GHz)
|
S11 | dB | ‰ -10 | ||
|
Working condition
|
Operating temperature |
TO | C | -2070 | |
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Beijing Rofea Optoelectronics Co., Ltd.
Mr Xiang Shu Xin
(Sales Manager )
(Sales Manager )
Send Inquiry
phone : 86-10-53689170
Mobile : +8618978968297
2008-210, 20TH FLOOR, QINGYUN CONTEMPORARY BUILDING, NO. 9, Beijing - 00000, China
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Beijing Rofea Optoelectronics Co., Ltd.
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